Chin. Phys. B
中国物理B  2020, Vol. 29 Issue (2): 027301    DOI: 10.1088/1674-1056/ab5fb9
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height
Zhong-Xu Wang(王中旭), Lin Du(杜林), Jun-Wei Liu(刘俊伟), Ying Wang(王颖), Yun Jiang(江芸), Si-Wei Ji(季思蔚), Shi-Wei Dong(董士伟), Wei-Wei Chen(陈伟伟), Xiao-Hong Tan(谭骁洪), Jin-Long Li(李金龙), Xiao-Jun Li(李小军), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China;
3 China Academy of Space Technology(Xi'an), Xi'an 710000, China;
4 Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China
Breakdown voltage enhancement in GaN channel and AlGaN channel HEMTs using large gate metal height
Zhong-Xu Wang(王中旭)1, Lin Du(杜林)2, Jun-Wei Liu(刘俊伟)1, Ying Wang(王颖)3, Yun Jiang(江芸)2, Si-Wei Ji(季思蔚)2, Shi-Wei Dong(董士伟)3, Wei-Wei Chen(陈伟伟)3, Xiao-Hong Tan(谭骁洪)4, Jin-Long Li(李金龙)4, Xiao-Jun Li(李小军)3, Sheng-Lei Zhao(赵胜雷)1, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1
1 Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Shanghai Precision Metrology and Testing Research Institute, Shanghai 201109, China;
3 China Academy of Space Technology(Xi'an), Xi'an 710000, China;
4 Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China

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