Chin. Phys. B
中国物理B  2020, Vol. 29 Issue (1): 017301    DOI: 10.1088/1674-1056/ab592c
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer
Yi-Fu Wang(王一夫), Mussaab I Niass, Fang Wang(王芳), Yu-Huai Liu(刘玉怀)
1 National Center of International Joint Research for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
2 International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
3 School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China
Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer
Yi-Fu Wang(王一夫)1,2,3, Mussaab I Niass1,2,3, Fang Wang(王芳)1,2,3, Yu-Huai Liu(刘玉怀)1,2,3
1 National Center of International Joint Research for Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
2 International Joint Laboratory of Electronic Materials and Systems, Zhengzhou University, Zhengzhou 450001, China;
3 School of Information Engineering, Zhengzhou University, Zhengzhou 450001, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn