Chin. Phys. B
中国物理B  2019, Vol. 28 Issue (10): 106101    DOI: 10.1088/1674-1056/ab3cc2
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Yi-Dan Tang(汤益丹), Xin-Yu Liu(刘新宇), Zheng-Dong Zhou(周正东), Yun Bai(白云), Cheng-Zhan Li(李诚瞻)
1 High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Zhuzhou CRRC Times Electric Co., Ltd, Zhuzhou 412001, China
Defects and electrical properties in Al-implanted 4H-SiC after activation annealing
Yi-Dan Tang(汤益丹)1,2, Xin-Yu Liu(刘新宇)1, Zheng-Dong Zhou(周正东)3, Yun Bai(白云)1, Cheng-Zhan Li(李诚瞻)3
1 High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Zhuzhou CRRC Times Electric Co., Ltd, Zhuzhou 412001, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn