Chin. Phys. B
中国物理B  2019, Vol. 28 Issue (10): 107801    DOI: 10.1088/1674-1056/ab3e44
SPECIAL TOPIC—Recent advances in thermoelectric materials and devices 最新目录| 下期目录| 过刊浏览| 高级检索 |
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
Yanxu Chen(陈彦旭), Dongliang Xu(许栋梁), Kaikai Xu(徐开凯), Ning Zhang(张宁), Siyang Liu(刘斯扬), Jianming Zhao(赵建明), Qian Luo(罗谦), Lukas W. Snyman, Jacobus W. Swart
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;
3 Department of Electrical Engineering, University of South Africa, Pretoria 0001, South Africa;
4 Faculty of Electrical and Computer Engineering, State University of Campinas-UNICAMP, Campinas CEP 13083-852, Brazil
Optoelectronic properties analysis of silicon light-emitting diode monolithically integrated in standard CMOS IC
Yanxu Chen(陈彦旭)1, Dongliang Xu(许栋梁)1, Kaikai Xu(徐开凯)1, Ning Zhang(张宁)1, Siyang Liu(刘斯扬)2, Jianming Zhao(赵建明)1, Qian Luo(罗谦)1, Lukas W. Snyman3, Jacobus W. Swart4
1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2 National ASIC System Engineering Research Center, Southeast University, Nanjing 210096, China;
3 Department of Electrical Engineering, University of South Africa, Pretoria 0001, South Africa;
4 Faculty of Electrical and Computer Engineering, State University of Campinas-UNICAMP, Campinas CEP 13083-852, Brazil

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