Chin. Phys. B
中国物理B  2019, Vol. 28 Issue (7): 078501    DOI: 10.1088/1674-1056/28/7/078501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effect of defects properties on InP-based high electron mobility transistors
Shu-Xiang Sun(孙树祥), Ming-Ming Chang(常明铭), Meng-Ke Li(李梦珂), Liu-Hong Ma(马刘红), Ying-Hui Zhong(钟英辉), Yu-Xiao Li(李玉晓), Peng Ding(丁芃), Zhi Jin(金智), Zhi-Chao Wei(魏志超)
1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China
Effect of defects properties on InP-based high electron mobility transistors
Shu-Xiang Sun(孙树祥)1, Ming-Ming Chang(常明铭)1, Meng-Ke Li(李梦珂)1, Liu-Hong Ma(马刘红)1, Ying-Hui Zhong(钟英辉)1, Yu-Xiao Li(李玉晓)1, Peng Ding(丁芃)2, Zhi Jin(金智)2, Zhi-Chao Wei(魏志超)3
1 School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, China;
2 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
3 China Academy of Space Technology, Beijing 100086, China

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