Chin. Phys. B
中国物理B  2019, Vol. 28 Issue (3): 038503    DOI: 10.1088/1674-1056/28/3/038503
SPECIAL TOPIC—Recent advances in thermoelectric materials and devices 最新目录| 下期目录| 过刊浏览| 高级检索 |
High performance lateral Schottky diodes based on quasi-degenerated Ga2O3
Yang Xu(徐阳), Xuanhu Chen(陈选虎), Liang Cheng(程亮), Fang-Fang Ren(任芳芳), Jianjun Zhou(周建军), Song Bai(柏松), Hai Lu(陆海), Shulin Gu(顾书林), Rong Zhang(张荣), Youdou Zheng(郑有炓), Jiandong Ye(叶建东)
1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China;
3 Research Institute of Shenzhen, Nanjing University, Shenzhen 518057, China;
4 State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, The 55th Research Institute of China Electronics Technology Group Corporation, Nanjing 210016, China
High performance lateral Schottky diodes based on quasi-degenerated Ga2O3
Yang Xu(徐阳)1, Xuanhu Chen(陈选虎)1, Liang Cheng(程亮)1, Fang-Fang Ren(任芳芳)1,2,3, Jianjun Zhou(周建军)4, Song Bai(柏松)4, Hai Lu(陆海)1, Shulin Gu(顾书林)1,2, Rong Zhang(张荣)1,2, Youdou Zheng(郑有炓)1,2, Jiandong Ye(叶建东)1,2,3
1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2 Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics, Nanjing University, Nanjing 210093, China;
3 Research Institute of Shenzhen, Nanjing University, Shenzhen 518057, China;
4 State Key Laboratory of Wide-Bandgap Semiconductor Power Electric Devices, The 55th Research Institute of China Electronics Technology Group Corporation, Nanjing 210016, China

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