Chin. Phys. B
中国物理B  2019, Vol. 28 Issue (3): 037201    DOI: 10.1088/1674-1056/28/3/037201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园)
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China
Stacked lateral double-diffused metal-oxide-semiconductor field effect transistor with enhanced depletion effect by surface substrate
Qi Li(李琦), Zhao-Yang Zhang(张昭阳), Hai-Ou Li(李海鸥), Tang-You Sun(孙堂友), Yong-He Chen(陈永和), Yuan Zuo(左园)
Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China

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