Chin. Phys. B
中国物理B  2019, Vol. 28 Issue (1): 017301    DOI: 10.1088/1674-1056/28/1/017301
SPECIAL TOPIC—Recent advances in thermoelectric materials and devices 最新目录| 下期目录| 过刊浏览| 高级检索 |
Pressure-mediated contact quality improvement between monolayer MoS2 and graphite
Mengzhou Liao(廖梦舟), Luojun Du(杜罗军), Tingting Zhang(张婷婷), Lin Gu(谷林), Yugui Yao(姚裕贵), Rong Yang(杨蓉), Dongxia Shi(时东霞), Guangyu Zhang(张广宇)
1 CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelecentronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
5 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China;
6 Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland
Pressure-mediated contact quality improvement between monolayer MoS2 and graphite
Mengzhou Liao(廖梦舟)1,2, Luojun Du(杜罗军)1,2,6, Tingting Zhang(张婷婷)1,2,3, Lin Gu(谷林)1,2, Yugui Yao(姚裕贵)3, Rong Yang(杨蓉)1,2,4, Dongxia Shi(时东霞)1,2,4, Guangyu Zhang(张广宇)1,2,4,5
1 CAS Key Laboratory of Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
3 Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelecentronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China;
4 Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing 100190, China;
5 Collaborative Innovation Center of Quantum Matter, Beijing 100190, China;
6 Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Finland

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