Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (12): 128502    DOI: 10.1088/1674-1056/27/12/128502
SPECIAL TOPIC—Photodetector: materials, physics, and applications 最新目录| 下期目录| 过刊浏览| 高级检索 |
Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors
Siqi Hu(胡思奇), Ruijuan Tian(田睿娟), Xiaoguang Luo(罗小光), Rui Yin(殷瑞), Yingchun Cheng(程迎春), Jianlin Zhao(赵建林), Xiaomu Wang(王肖沐), Xuetao Gan(甘雪涛)
1 MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical Univeristy, Xi'an 710072, China;
2 Shannxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China;
3 School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
Photovoltaic effects in reconfigurable heterostructured black phosphorus transistors
Siqi Hu(胡思奇)1, Ruijuan Tian(田睿娟)1, Xiaoguang Luo(罗小光)2, Rui Yin(殷瑞)1, Yingchun Cheng(程迎春)2, Jianlin Zhao(赵建林)1, Xiaomu Wang(王肖沐)3, Xuetao Gan(甘雪涛)1
1 MOE Key Laboratory of Material Physics and Chemistry under Extraordinary Conditions, and Shaanxi Key Laboratory of Optical Information Technology, School of Science, Northwestern Polytechnical Univeristy, Xi'an 710072, China;
2 Shannxi Institute of Flexible Electronics, Northwestern Polytechnical University, Xi'an 710072, China;
3 School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China

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