Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (12): 127302    DOI: 10.1088/1674-1056/27/12/127302
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
A simulation study of field plate termination in Ga2O3 Schottky barrier diodes
Hui Wang(王辉), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Si-Qi Lei(雷思琦), Hong-Yu Yu(于洪宇)
1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
3 Shenzhen Key Laboratory of The Third Generation Semiconductor, Shenzhen 518055, China;
4 Guangdong GaN Devices Engineering and Technical Research Center, Shenzhen 518055, China
A simulation study of field plate termination in Ga2O3 Schottky barrier diodes
Hui Wang(王辉)1,2,3,4, Ling-Li Jiang(蒋苓利)1,3,4, Xin-Peng Lin(林新鹏)1,3,4, Si-Qi Lei(雷思琦)1,3,4, Hong-Yu Yu(于洪宇)1,3,4
1 Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China;
2 School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;
3 Shenzhen Key Laboratory of The Third Generation Semiconductor, Shenzhen 518055, China;
4 Guangdong GaN Devices Engineering and Technical Research Center, Shenzhen 518055, China

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