Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (9): 097308    DOI: 10.1088/1674-1056/27/9/097308
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
Chong Wang(王冲), Xin Wang(王鑫), Xue-Feng Zheng(郑雪峰), Yun Wang(王允), Yun-Long He(何云龙), Ye Tian(田野), Qing He(何晴), Ji Wu(吴忌), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 CYG Wayon Micro-Electronics Co., Ltd, Xi'an 710065, China
Characteristics and threshold voltage model of GaN-based FinFET with recessed gate
Chong Wang(王冲)1, Xin Wang(王鑫)1, Xue-Feng Zheng(郑雪峰)1, Yun Wang(王允)2, Yun-Long He(何云龙)1, Ye Tian(田野)1, Qing He(何晴)1, Ji Wu(吴忌)1, Wei Mao(毛维)1, Xiao-Hua Ma(马晓华)1, Jin-Cheng Zhang(张进成)1, Yue Hao(郝跃)1
1 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 CYG Wayon Micro-Electronics Co., Ltd, Xi'an 710065, China

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