Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (6): 067303    DOI: 10.1088/1674-1056/27/6/067303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer
Chen Wang(王尘), Yi-Hong Xu(许怡红), Song-Yan Chen(陈松岩), Cheng Li(李成), Jian-Yuan Wang(汪建元), Wei Huang(黄巍), Hong-Kai Lai(赖虹凯), Rong-Rong Guo(郭榕榕)
1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Xiamen Institute of Technology, Xiamen 361024, China;
3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China
Improved performance of Au nanocrystal nonvolatile memory by N2-plasma treatment on HfO2 blocking layer
Chen Wang(王尘)1, Yi-Hong Xu(许怡红)2, Song-Yan Chen(陈松岩)3, Cheng Li(李成)3, Jian-Yuan Wang(汪建元)3, Wei Huang(黄巍)3, Hong-Kai Lai(赖虹凯)3, Rong-Rong Guo(郭榕榕)1
1 Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering, Xiamen University of Technology, Xiamen 361024, China;
2 Xiamen Institute of Technology, Xiamen 361024, China;
3 Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China

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