Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (4): 048504    DOI: 10.1088/1674-1056/27/4/048504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
Xu-Yang Li(栗旭阳), Zhi-Nong Yu(喻志农), Jin Cheng(程锦), Yong-Hua Chen(陈永华), Jian-She Xue(薛建设), Jian Guo(郭建), Wei Xue(薛唯)
1. School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
2. Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China
Water-based processed and alkoxide-based processed indium oxide thin-film transistors at different annealing temperatures
Xu-Yang Li(栗旭阳)1, Zhi-Nong Yu(喻志农)1, Jin Cheng(程锦)1, Yong-Hua Chen(陈永华)1, Jian-She Xue(薛建设)2, Jian Guo(郭建)1,2, Wei Xue(薛唯)1
1. School of Optics and Photonics and Beijing Engineering Research Center of Mixed Reality and Advanced Display, Beijing Institute of Technology, Beijing 100081, China;
2. Beijing BOE Optoelectronics Technology Co., Ltd, Beijing 100176, China

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