Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (4): 048503    DOI: 10.1088/1674-1056/27/4/048503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Research on the radiation hardened SOI devices with single-step Si ion implantation
Li-Hua Dai(戴丽华), Da-Wei Bi(毕大炜), Zhi-Yuan Hu(胡志远), Xiao-Nian Liu(刘小年), Meng-Ying Zhang(张梦映), Zheng-Xuan Zhang(张正选), Shi-Chang Zou(邹世昌)
1. University of Chinese Academy of Sciences, Beijing 100049, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
Research on the radiation hardened SOI devices with single-step Si ion implantation
Li-Hua Dai(戴丽华)1,2, Da-Wei Bi(毕大炜)2, Zhi-Yuan Hu(胡志远)2, Xiao-Nian Liu(刘小年)1,2, Meng-Ying Zhang(张梦映)1,2, Zheng-Xuan Zhang(张正选)2, Shi-Chang Zou(邹世昌)2
1. University of Chinese Academy of Sciences, Beijing 100049, China;
2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

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