Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (4): 048502    DOI: 10.1088/1674-1056/27/4/048502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator
Xue Chen(陈雪), Zhi-Gang Wang(汪志刚), Xi Wang(王喜), James B Kuo
1. School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China;
2. “National” Taiwan University, Taipei, China
Closed-form breakdown voltage/specific on-resistance model using charge superposition technique for vertical power double-diffused metal-oxide-semiconductor device with high-κ insulator
Xue Chen(陈雪)1, Zhi-Gang Wang(汪志刚)1, Xi Wang(王喜)1, James B Kuo2
1. School of Information Science and Technology, Southwest Jiao Tong University, Chengdu 611756, China;
2. “National” Taiwan University, Taipei, China

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