Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (4): 047307    DOI: 10.1088/1674-1056/27/4/047307
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
Ting-Ting Liu(刘婷婷), Kai Zhang(张凯), Guang-Run Zhu(朱广润), Jian-Jun Zhou(周建军), Yue-Chan Kong(孔月婵), Xin-Xin Yu(郁鑫鑫), Tang-Sheng Chen(陈堂胜)
1. Research Institution, China Electronic Equipment & System Engineering Company, Beijing 100039, China;
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
Ting-Ting Liu(刘婷婷)1, Kai Zhang(张凯)2, Guang-Run Zhu(朱广润)2, Jian-Jun Zhou(周建军)2, Yue-Chan Kong(孔月婵)2, Xin-Xin Yu(郁鑫鑫)2, Tang-Sheng Chen(陈堂胜)2
1. Research Institution, China Electronic Equipment & System Engineering Company, Beijing 100039, China;
2. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016, China

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