Chin. Phys. B
中国物理B  2018, Vol. 27 Issue (3): 036102    DOI: 10.1088/1674-1056/27/3/036102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
Xiao-Long Li(李小龙), Wu Lu(陆妩), Xin Wang(王信), Xin Yu(于新), Qi Guo(郭旗), Jing Sun(孙静), Mo-Han Liu(刘默寒), Shuai Yao(姚帅), Xin-Yu Wei(魏昕宇), Cheng-Fa He(何承发)
1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China
Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor
Xiao-Long Li(李小龙)1,2,3, Wu Lu(陆妩)1,2, Xin Wang(王信)1,2, Xin Yu(于新)1,2, Qi Guo(郭旗)1,2, Jing Sun(孙静)1,2, Mo-Han Liu(刘默寒)1,2,3, Shuai Yao(姚帅)1,2,3, Xin-Yu Wei(魏昕宇)1,2, Cheng-Fa He(何承发)1,2
1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China

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