Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (12): 127309    DOI: 10.1088/1674-1056/26/12/127309
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction
Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Xin Li(李鑫), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣)
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction
Yuan-Hao Miao(苗渊浩), Hui-Yong Hu(胡辉勇), Xin Li(李鑫), Jian-Jun Song(宋建军), Rong-Xi Xuan(宣荣喜), He-Ming Zhang(张鹤鸣)
Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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