Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (12): 127701    DOI: 10.1088/1674-1056/26/12/127701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO
Qiu-Jie Sun(孙秋杰), Yu-Ming Zhang(张玉明), Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Yi-Meng Zhang(张艺蒙), Cheng-Zhan Li(李诚瞻), Yan-Li Zhao(赵艳黎), Yi-Men Zhang(张义门)
1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Zhuzhou CRRC Times Electric Company Limited, Zhuzhou 412001, China
Near-interface oxide traps in 4H-SiC MOS structures fabricated with and without annealing in NO
Qiu-Jie Sun(孙秋杰)1, Yu-Ming Zhang(张玉明)1, Qing-Wen Song(宋庆文)1, Xiao-Yan Tang(汤晓燕)1, Yi-Meng Zhang(张艺蒙)1, Cheng-Zhan Li(李诚瞻)2, Yan-Li Zhao(赵艳黎)2, Yi-Men Zhang(张义门)1
1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2. Zhuzhou CRRC Times Electric Company Limited, Zhuzhou 412001, China

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