Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (12): 127102    DOI: 10.1088/1674-1056/26/12/127102
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Peng Cui(崔鹏), Zhao-Jun Lin(林兆军), Chen Fu(付晨), Yan Liu(刘艳), Yuan-Jie Lv(吕元杰)
1. School of Microelectronics, Shandong University, Jinan 250100, China;
2. National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors
Peng Cui(崔鹏)1, Zhao-Jun Lin(林兆军)1, Chen Fu(付晨)1, Yan Liu(刘艳)1, Yuan-Jie Lv(吕元杰)2
1. School of Microelectronics, Shandong University, Jinan 250100, China;
2. National Key Laboratory of Application Specific Integrated Circuit(ASIC), Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

Copyright © the Chinese Physical Society
Address:Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn