Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (10): 107102    DOI: 10.1088/1674-1056/26/10/107102
CONDENSED MATTER:ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
The residual C concentration control for low temperature growth p-type GaN
Shuang-Tao Liu(刘双韬), De-Gang Zhao(赵德刚), Jing Yang(杨静), De-Sheng Jiang(江德生), Feng Liang(梁锋), Ping Chen(陈平), Jian-Jun Zhu(朱建军), Zong-Shun Liu(刘宗顺), Xiang Li(李翔), Wei Liu(刘炜), Yao Xing(邢瑶), Li-Qun Zhang(张立群)
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China
The residual C concentration control for low temperature growth p-type GaN
Shuang-Tao Liu(刘双韬)1, De-Gang Zhao(赵德刚)1,2, Jing Yang(杨静)1, De-Sheng Jiang(江德生)1, Feng Liang(梁锋)1, Ping Chen(陈平)1, Jian-Jun Zhu(朱建军)1, Zong-Shun Liu(刘宗顺)1, Xiang Li(李翔)1, Wei Liu(刘炜)1, Yao Xing(邢瑶)1, Li-Qun Zhang(张立群)3
1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2. School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China;
3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

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