Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (9): 098502    DOI: 10.1088/1674-1056/26/9/098502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout
Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲)
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electrical Engineering, East China Normal University, Shanghai 200241, China
Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout
Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进), Jin-Zhong Zhang(张金中), Yan-Ling Shi(石艳玲)
Shanghai Key Laboratory of Multidimensional Information Processing, Department of Electrical Engineering, East China Normal University, Shanghai 200241, China

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