Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (9): 096103    DOI: 10.1088/1674-1056/26/9/096103
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Qiwen Zheng(郑齐文), Jiangwei Cui(崔江维), Mengxin Liu(刘梦新), Dandan Su(苏丹丹), Hang Zhou(周航), Teng Ma(马腾), Xuefeng Yu(余学峰), Wu Lu(陆妩), Qi Guo(郭旗), Fazhan Zhao(赵发展)
1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China;
4 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100049, China
Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin
Qiwen Zheng(郑齐文)1,2, Jiangwei Cui(崔江维)1,2, Mengxin Liu(刘梦新)4, Dandan Su(苏丹丹)1,2,3, Hang Zhou(周航)1,2,3, Teng Ma(马腾)1,2,3, Xuefeng Yu(余学峰)1,2, Wu Lu(陆妩)1,2, Qi Guo(郭旗)1,2, Fazhan Zhao(赵发展)4
1 Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China;
2 Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China;
3 University of Chinese Academy of Sciences, Beijing 100049, China;
4 Key Laboratory of Silicon Device Technology, Chinese Academy of Sciences, Beijing 100049, China

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