Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (9): 096102    DOI: 10.1088/1674-1056/26/9/096102
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
Jia-Nan Wei(魏佳男), Hong-Xia Guo(郭红霞), Feng-Qi Zhang(张凤祁), Yin-Hong Luo(罗尹虹), Li-Li Ding(丁李利), Xiao-Yu Pan(潘霄宇), Yang Zhang(张阳), Yu-Hui Liu(刘玉辉)
1 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 Northwest Institute of Nuclear Technology, Xi'an 710024, China
Ionizing radiation effect on single event upset sensitivity of ferroelectric random access memory
Jia-Nan Wei(魏佳男)1, Hong-Xia Guo(郭红霞)1,2, Feng-Qi Zhang(张凤祁)2, Yin-Hong Luo(罗尹虹)2, Li-Li Ding(丁李利)2, Xiao-Yu Pan(潘霄宇)2, Yang Zhang(张阳)1, Yu-Hui Liu(刘玉辉)1
1 School of Material Science and Engineering, Xiangtan University, Xiangtan 411105, China;
2 Northwest Institute of Nuclear Technology, Xi'an 710024, China

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