Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (8): 087501    DOI: 10.1088/1674-1056/26/8/087501
SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters 最新目录| 下期目录| 过刊浏览| 高级检索 |
Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices
Yan Cui(崔岩), Ling Yang(杨玲), Teng Gao(高腾), Bo Li(李博), Jia-Jun Luo(罗家俊)
1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences, Beijing 100029, China
Total ionizing radiation-induced read bit-errors in toggle magnetoresistive random-access memory devices
Yan Cui(崔岩)1,2, Ling Yang(杨玲)1,2, Teng Gao(高腾)1,2, Bo Li(李博)1,2, Jia-Jun Luo(罗家俊)1,2
1 Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;
2 Key Laboratory of Silicon Device and Technology, Chinese Academy of Sciences, Beijing 100029, China

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