Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (7): 077303    DOI: 10.1088/1674-1056/26/7/077303
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Analytical capacitance model for 14 nm FinFET considering dual-k spacer
Fang-Lin Zheng(郑芳林), Cheng-Sheng Liu(刘程晟), Jia-Qi Ren(任佳琪), Yan-Ling Shi(石艳玲), Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进)
Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China
Analytical capacitance model for 14 nm FinFET considering dual-k spacer
Fang-Lin Zheng(郑芳林), Cheng-Sheng Liu(刘程晟), Jia-Qi Ren(任佳琪), Yan-Ling Shi(石艳玲), Ya-Bin Sun(孙亚宾), Xiao-Jin Li(李小进)
Shanghai Key Laboratory of Multidimensional Information Processing and the Department of Electrical Engineering, East China Normal University, Shanghai 200241, China

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