Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (6): 068103    DOI: 10.1088/1674-1056/26/6/068103
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method
Guan-Qing Yang(杨冠卿), Shi-Zhu Zhang(张世著), Bo Xu(徐波), Yong-Hai Chen(陈涌海), Zhan-Guo Wang(王占国)
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China
Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation-dissolution-regrowth method
Guan-Qing Yang(杨冠卿)1,2, Shi-Zhu Zhang(张世著)1,2, Bo Xu(徐波)1,2, Yong-Hai Chen(陈涌海)1,2, Zhan-Guo Wang(王占国)1,2
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China

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