Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (5): 058501    DOI: 10.1088/1674-1056/26/5/058501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect
He Guan(关赫), Hui Guo(郭辉)
1 Northwestern Polytechnical University, Xi'an 710072, China;
2 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China
An optimized fitting function with least square approximation inInAs/AlSb HFET small-signal model for characterizingthe frequency dependency of impact ionization effect
He Guan(关赫)1, Hui Guo(郭辉)2
1 Northwestern Polytechnical University, Xi'an 710072, China;
2 School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices of China, Xi'an 710071, China

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