Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (3): 038504    DOI: 10.1088/1674-1056/26/3/038504
TOPICAL REVIEW-2D materials: physics and device applications 最新目录| 下期目录| 过刊浏览| 高级检索 |
Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Xia Wei(魏侠), Fa-Guang Yan(闫法光), Chao Shen(申超), Quan-Shan Lv(吕全山), Kai-You Wang(王开友)
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 100049, China
Photodetectors based on junctions of two-dimensional transition metal dichalcogenides
Xia Wei(魏侠)1, Fa-Guang Yan(闫法光)1, Chao Shen(申超)1, Quan-Shan Lv(吕全山)1, Kai-You Wang(王开友)1,2
1 State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Science, Beijing 100049, China

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