Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (3): 034208    DOI: 10.1088/1674-1056/26/3/034208
TOPICAL REVIEW-2D materials: physics and device applications 最新目录| 下期目录| 过刊浏览| 高级检索 |
Band gap engineering of atomically thin two-dimensional semiconductors
Cui-Huan Ge(葛翠环), Hong-Lai Li(李洪来), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练)
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China
Band gap engineering of atomically thin two-dimensional semiconductors
Cui-Huan Ge(葛翠环), Hong-Lai Li(李洪来), Xiao-Li Zhu(朱小莉), An-Lian Pan(潘安练)
Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, School of Physics and Electronics, Hunan University, Changsha 410082, China

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