Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (3): 036103    DOI: 10.1088/1674-1056/26/3/036103
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs
Shuang Fan(樊双), Zhi-Yuan Hu(胡志远), Zheng-Xuan Zhang(张正选), Bing-Xu Ning(宁冰旭), Da-Wei Bi(毕大炜), Li-Hua Dai(戴丽华), Meng-Ying Zhang(张梦映), Le-Qing Zhang(张乐情)
1 The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
Total ionizing dose induced single transistor latchup in 130-nm PDSOI input/output NMOSFETs
Shuang Fan(樊双)1,2, Zhi-Yuan Hu(胡志远)1, Zheng-Xuan Zhang(张正选)1, Bing-Xu Ning(宁冰旭)1, Da-Wei Bi(毕大炜)1, Li-Hua Dai(戴丽华)1,2, Meng-Ying Zhang(张梦映)1,2, Le-Qing Zhang(张乐情)1,2
1 The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China;
2 Graduate University of the Chinese Academy of Sciences, Beijing 100049, China

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