Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (1): 018502    DOI: 10.1088/1674-1056/26/1/018502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Random telegraph noise on the threshold voltage of multi-level flash memory
Yiming Liao(廖轶明), Xiaoli Ji(纪小丽), Yue Xu(徐跃), Chengxu Zhang(张城绪), Qiang Guo(郭强), Feng Yan(闫锋)
1. College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. Quality and Reliability Engineering, Wuhan Xinxin Semiconductor Manufacturing Company, Wuhan, China;
3. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China
Random telegraph noise on the threshold voltage of multi-level flash memory
Yiming Liao(廖轶明)1, Xiaoli Ji(纪小丽)1, Yue Xu(徐跃)3, Chengxu Zhang(张城绪)1, Qiang Guo(郭强)2, Feng Yan(闫锋)1
1. College of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. Quality and Reliability Engineering, Wuhan Xinxin Semiconductor Manufacturing Company, Wuhan, China;
3. College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China

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