Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (2): 028502    DOI: 10.1088/1674-1056/26/2/028502
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
Min Guo(郭敏), Zhi-You Guo(郭志友), Jing Huang(黄晶), Yang Liu(刘洋), Shun-Yu Yao(姚舜禹)
1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;
2 Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China
Improvement of the carrier distribution with GaN/InGaN/AlGaN/InGaN/GaN composition-graded barrier for InGaN-based blue light-emitting diode
Min Guo(郭敏)1,2, Zhi-You Guo(郭志友)1,2, Jing Huang(黄晶)1, Yang Liu(刘洋)1,2, Shun-Yu Yao(姚舜禹)1
1 Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangzhou 510631, China;
2 Institute of the Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

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