Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (2): 028501    DOI: 10.1088/1674-1056/26/2/028501
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter
Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Investigation on latch-up susceptibility induced by high-power microwave in complementary metal-oxide-semiconductor inverter
Yu-Hang Zhang(张宇航), Chang-Chun Chai(柴常春), Xin-Hai Yu(于新海), Yin-Tang Yang(杨银堂), Yang Liu(刘阳), Qing-Yang Fan(樊庆扬), Chun-Lei Shi(史春蕾)
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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