Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (1): 018504    DOI: 10.1088/1674-1056/26/1/018504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)
Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics, Tsinghua University, Beijing 100084, China
Heteromaterial-gate line tunnel field-effect transistor based on Si/Ge heterojunction
Shuqin Zhang(张书琴), Renrong Liang(梁仁荣), Jing Wang(王敬), Zhen Tan(谭桢), Jun Xu(许军)
Tsinghua National Laboratory for Information Science and Technology Institute of Microelectronics, Tsinghua University, Beijing 100084, China

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