Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (1): 017803    DOI: 10.1088/1674-1056/26/1/017803
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
Feng Xu(徐峰), Peng Chen(陈鹏), Fu-Long Jiang(蒋府龙), Ya-Yun Liu(刘亚云), Zi-Li Xie(谢自立), Xiang-Qian Xiu(修向前), Xue-Mei Hua(华雪梅), Yi Shi(施毅), Rong Zhang(张荣), You-Liao Zheng(郑有炓)
1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China
High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier
Feng Xu(徐峰)1,2, Peng Chen(陈鹏)1,2, Fu-Long Jiang(蒋府龙)1, Ya-Yun Liu(刘亚云)1, Zi-Li Xie(谢自立)1, Xiang-Qian Xiu(修向前)1, Xue-Mei Hua(华雪梅)1, Yi Shi(施毅)1, Rong Zhang(张荣)1, You-Liao Zheng(郑有炓)1
1. Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2. Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009, China

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