Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (1): 017701    DOI: 10.1088/1674-1056/26/1/017701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才)
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. National Laboratory of Analog ICs, Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China;
3. School of Information Science and Technology, Southwest Jiaotong University, Chengdu 611756, China
A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer
Wei Li(李威)1, Zhi Zheng(郑直)2, Zhigang Wang(汪志刚)3, Ping Li(李平)1, Xiaojun Fu(付晓君)2, Zhengrong He(何峥嵘)2, Fan Liu(刘凡)2, Feng Yang(杨丰)2, Fan Xiang(向凡)2, Luncai Liu(刘伦才)2
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
2. National Laboratory of Analog ICs, Sichuan Institute of Solid-State Circuits, CETC, Chongqing 400060, China;
3. School of Information Science and Technology, Southwest Jiaotong University, Chengdu 611756, China

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