Chin. Phys. B
中国物理B  2017, Vol. 26 Issue (1): 017304    DOI: 10.1088/1674-1056/26/1/017304
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
Ling Yang(杨凌), Xiao-Wei Zhou(周小伟), Xiao-Hua Ma(马晓华), Ling Lv(吕玲), Yan-Rong Cao(曹艳荣), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China;
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3. School of Microelectronics, Xidian University, Xi'an 710071, China;
4. School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China
Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor
Ling Yang(杨凌)1,2, Xiao-Wei Zhou(周小伟)1,2, Xiao-Hua Ma(马晓华)1,2, Ling Lv(吕玲)1,2, Yan-Rong Cao(曹艳荣)4, Jin-Cheng Zhang(张进成)1,3, Yue Hao(郝跃)1,3
1. State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China;
2. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
3. School of Microelectronics, Xidian University, Xi'an 710071, China;
4. School of Mechano-Electronic Engineering, Xidian University, Xi'an 710071, China

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