Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (12): 127303    DOI: 10.1088/1674-1056/25/12/127303
CONDENSED MATTER:ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春)
Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV) Light-Emitting Materials andTechnology of Ministry of Education, Northeast Normal University, Changchun 130024, China
Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments
Han-Lu Ma(马寒露), Zhong-Qiang Wang(王中强), Hai-Yang Xu(徐海阳), Lei Zhang(张磊), Xiao-Ning Zhao(赵晓宁), Man-Shu Han(韩曼舒), Jian-Gang Ma(马剑钢), Yi-Chun Liu(刘益春)
Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for Ultra Violet(UV) Light-Emitting Materials andTechnology of Ministry of Education, Northeast Normal University, Changchun 130024, China

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