Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (11): 118506    DOI: 10.1088/1674-1056/25/11/118506
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer
Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢)
1 State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer
Jia-Yong Lin(林家勇)1, Yan-Li Pei(裴艳丽)1, Yi Zhuo(卓毅)1, Zi-Min Chen(陈梓敏)2, Rui-Qin Hu(胡锐钦)1, Guang-Shuo Cai(蔡广烁)1, Gang Wang(王钢)1
1 State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

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