Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (11): 117301    DOI: 10.1088/1674-1056/25/11/117301
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
Miao Geng(耿苗), Pei-Xian Li(李培咸), Wei-Jun Luo(罗卫军), Peng-Peng Sun(孙朋朋), Rong Zhang(张蓉), Xiao-Hua Ma(马晓华)
1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method
Miao Geng(耿苗)1,2, Pei-Xian Li(李培咸)1, Wei-Jun Luo(罗卫军)2, Peng-Peng Sun(孙朋朋)2, Rong Zhang(张蓉)1,2, Xiao-Hua Ma(马晓华)1
1 School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

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