Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (10): 108504    DOI: 10.1088/1674-1056/25/10/108504
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT
Chong Wang(王冲), Meng-Di Zhao(赵梦荻), Yun-Long He(何云龙), Xue-Feng Zheng(郑雪峰), Kun Zhang(张坤), Xiao-Xiao Wei(魏晓晓), Wei Mao(毛维), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃)
1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;
2 The School of Microelectronics, Xidian University, Xi'an 710071, China
Photoresponse and trap characteristics of transparent AZO-gated AlGaN/GaN HEMT
Chong Wang(王冲)1,2, Meng-Di Zhao(赵梦荻)1,2, Yun-Long He(何云龙)1,2, Xue-Feng Zheng(郑雪峰)1,2, Kun Zhang(张坤)1,2, Xiao-Xiao Wei(魏晓晓)1,2, Wei Mao(毛维)1,2, Xiao-Hua Ma(马晓华)1,2, Jin-Cheng Zhang(张进成)1,2, Yue Hao(郝跃)1,2
1 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;
2 The School of Microelectronics, Xidian University, Xi'an 710071, China

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