Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (10): 108503    DOI: 10.1088/1674-1056/25/10/108503
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY 最新目录| 下期目录| 过刊浏览| 高级检索 |
A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET
Shweta Tripathi
Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, India
A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET
Shweta Tripathi
Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, India

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