Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (10): 107302    DOI: 10.1088/1674-1056/25/10/107302
SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters 最新目录| 下期目录| 过刊浏览| 高级检索 |
Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮)
School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China
Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access memory with the BN insertion layer
Shuai Su(苏帅), Xiao-Chuan Jian(鉴肖川), Fang Wang(王芳), Ye-Mei Han(韩叶梅), Yu-Xian Tian(田雨仙), Xiao-Yang Wang(王晓旸), Hong-Zhi Zhang(张宏智), Kai-Liang Zhang(张楷亮)
School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, Tianjin 300384, China

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