Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (9): 097101    DOI: 10.1088/1674-1056/25/9/097101
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices
Yifan Jia(贾一凡), Hongliang Lv(吕红亮), Yingxi Niu(钮应喜), Ling Li(李玲), Qingwen Song(宋庆文), Xiaoyan Tang(汤晓燕), Chengzhan Li(李诚瞻), Yanli Zhao(赵艳黎), Li Xiao(肖莉), Liangyong Wang(王梁永), Guangming Tang(唐光明), Yimen Zhang(张义门), Yuming Zhang(张玉明)
1. School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;
2. Global Energy Interconnection Research Institute, Beijing 102209, China;
3. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
4. Zhuzhou CRRC Times Electric Company Limited, Zhuzhou 412001, China;
5. Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057, China
Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal-oxide-semiconductor devices
Yifan Jia(贾一凡)1, Hongliang Lv(吕红亮)1, Yingxi Niu(钮应喜)2, Ling Li(李玲)2, Qingwen Song(宋庆文)1,3, Xiaoyan Tang(汤晓燕)1, Chengzhan Li(李诚瞻)4, Yanli Zhao(赵艳黎)4, Li Xiao(肖莉)5, Liangyong Wang(王梁永)5, Guangming Tang(唐光明)5, Yimen Zhang(张义门)1, Yuming Zhang(张玉明)1
1. School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi'an 710071, China;
2. Global Energy Interconnection Research Institute, Beijing 102209, China;
3. School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China;
4. Zhuzhou CRRC Times Electric Company Limited, Zhuzhou 412001, China;
5. Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057, China

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