Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (9): 096110    DOI: 10.1088/1674-1056/25/9/096110
CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors
Lili Ding(丁李利), Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella
1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China;
2. RREACT group, Department of Information Engineering, Padova University, Italy;
3. INFN, Padova, Italy
Comparison of radiation degradation induced by x-rayand 3-MeV protons in 65-nm CMOS transistors
Lili Ding(丁李利)1,2,3, Simone Gerardin2,3, Marta Bagatin2, Dario Bisello2, Serena Mattiazzo2, Alessandro Paccagnella2,3
1. State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710072, China;
2. RREACT group, Department of Information Engineering, Padova University, Italy;
3. INFN, Padova, Italy

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