Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (7): 077201    DOI: 10.1088/1674-1056/25/7/077201
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Improving breakdown voltage performance of SOI power device with folded drift region
Qi Li(李琦), Hai-Ou Li(李海鸥), Ping-Jiang Huang(黄平奖), Gong-Li Xiao(肖功利), Nian-Jiong Yang(杨年炯)
1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
2 Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin 541004, China;
3 Guangxi Experiment Center of Information Science, Guilin 541004, China;
4 Guangxi Key Laboratory of Automobile Components and Vehicle Technology, Guangxi University of Science and Technology, Liuzhou 545006, China
Improving breakdown voltage performance of SOI power device with folded drift region
Qi Li(李琦)1, Hai-Ou Li(李海鸥)2, Ping-Jiang Huang(黄平奖)2, Gong-Li Xiao(肖功利)3, Nian-Jiong Yang(杨年炯)4
1 Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;
2 Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guilin University of Electronic Technology, Guilin 541004, China;
3 Guangxi Experiment Center of Information Science, Guilin 541004, China;
4 Guangxi Key Laboratory of Automobile Components and Vehicle Technology, Guangxi University of Science and Technology, Liuzhou 545006, China

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