Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (7): 077801    DOI: 10.1088/1674-1056/25/7/077801
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Thermally induced native defect transform in annealed GaSb
Jie Su(苏杰), Tong Liu(刘彤), Jing-Ming Liu(刘京明), Jun Yang(杨俊), Yong-Biao Bai(白永彪), Gui-Ying Shen(沈桂英), Zhi-Yuan Dong(董志远), Fang-Fang Wang(王芳芳), You-Wen Zhao(赵有文)
1 Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
Thermally induced native defect transform in annealed GaSb
Jie Su(苏杰)1,2, Tong Liu(刘彤)1, Jing-Ming Liu(刘京明)1, Jun Yang(杨俊)1, Yong-Biao Bai(白永彪)1,2, Gui-Ying Shen(沈桂英)1,2, Zhi-Yuan Dong(董志远)1, Fang-Fang Wang(王芳芳)3, You-Wen Zhao(赵有文)1
1 Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 Key Laboratory of Infrared Imaging Materials and Detectors Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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