Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (6): 067206    DOI: 10.1088/1674-1056/25/6/067206
SPECIAL TOPIC --- Non-equilibrium phenomena in soft matters 最新目录| 下期目录| 过刊浏览| 高级检索 |
High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
Ze-Zhao He(何泽召), Ke-Wu Yang(杨克武), Cui Yu(蔚翠), Qing-Bin Liu(刘庆彬), Jing-Jing Wang(王晶晶), Jia Li(李佳), Wei-Li Lu(芦伟立), Zhi-Hong Feng(冯志红), Shu-Jun Cai(蔡树军)
1 School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China;
2 National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China
High temperature characteristics of bilayer epitaxial graphene field-effect transistors on SiC Substrate
Ze-Zhao He(何泽召)1,2, Ke-Wu Yang(杨克武)1,2, Cui Yu(蔚翠)2, Qing-Bin Liu(刘庆彬)2, Jing-Jing Wang(王晶晶)2, Jia Li(李佳)2, Wei-Li Lu(芦伟立)2, Zhi-Hong Feng(冯志红)2, Shu-Jun Cai(蔡树军)2
1 School of Electronic and Information Engineering, Hebei University of Technology, Tianjin 300130, China;
2 National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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