Chin. Phys. B
中国物理B  2016, Vol. 25 Issue (5): 057702    DOI: 10.1088/1674-1056/25/5/057702
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES 最新目录| 下期目录| 过刊浏览| 高级检索 |
Distribution of electron traps in SiO2/HfO2 nMOSFET
Xiao-Hui Hou(侯晓慧), Xue-Feng Zheng(郑雪峰), Ao-Chen Wang(王奥琛), Ying-Zhe Wang(王颖哲), Hao-Yu Wen(文浩宇), Zhi-Jing Liu(刘志镜), Xiao-Wei Li(李小炜), Yin-He Wu(吴银河)
1. School of Computer Science, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China
Distribution of electron traps in SiO2/HfO2 nMOSFET
Xiao-Hui Hou(侯晓慧)1, Xue-Feng Zheng(郑雪峰)2, Ao-Chen Wang(王奥琛)2, Ying-Zhe Wang(王颖哲)2, Hao-Yu Wen(文浩宇)2, Zhi-Jing Liu(刘志镜)1, Xiao-Wei Li(李小炜)2, Yin-He Wu(吴银河)2
1. School of Computer Science, Xidian University, Xi'an 710071, China;
2. Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

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